^e.tni-dondilcto'i lpioaucti, una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor 2SC2517 description ? low collector saturation voltage , ? fast switching speed applications ? designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,dc/dc converters, and high frequency power amplifiers. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic icm ib pc tj tslg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous total power dissipation @ tc=25'c junction temperature storage temperature range value 150 100 12 5 10 2.5 30 150 -55-150 unit v v v a a a w "c r ' ' * pin 1. base 2. collect or j ' 3. emitter : 2 ;. to-220c package u i a* ? 1 - b m ?j ?< v ?i ..?-? f ? x. * h t ] k ' .0 h < t -> tir rr , c |- j i dtm a b r d f g h v k l 0 r s j y mm m!m max 15.50 15.00 o.oo 10.20 4.20 450 0.70 0.00 3.40 3,70 4.08 5.18 2.6s 2.00 0.44 0,60 13,00 13.40 1.20 1.4s 2.70 2.00 2.30 2.70 1.29 1.35 0.45 6.65 8.66 8.86 *-s ??r* j nj scini-cunductors reserves the right lo change tost conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time ot'goiim to press. i umevcr. n.i semi-coiuluctors assumes no responsibilit) tor any errors or omissions discovered in its use.' n.i seini-t'onduclttrs encourages customers to \erily that datasheets are current before plneing orders. quality semi-conductors
silicon npn power transistor 2SC2517 electrical characteristics tc=25c unless otherwise specified symbol vceo(sus) vce(sat) vbe(sal) icbo icer icex iebo hpe-1 hpe-2 parameter collector-emitter sustaining voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain conditions lc= 50ma; ib= 0 ' lc= 3.0a; ib= 0.3a lc= 3.0a; ib= 0.3a vcb=100v; ie=0 vce= 100v; rbe= 51q , ta=125jc vce= 100v;vbe(0ffr-1.5v vce= 100v; vbe(off)= -1.5v, ta=125c veb=10v; lc=0 lc=0.2a;vce=5v-' lc= 2a; vce= 5v min 100 40 40 max 0.6 1.5 10 1.0 10 1.0 10 200 unit v v v u a ma u a ma u a switching times ton tstg tf turn-on time storage time fall time lc=3.0a,rl=17n, ib1= -ib2= 0.3a,vcc:? 50v 0.5 2.5 0.5 (j s u s (j s hfe.2 classifications m 40-80 l 60-120 k 100-200
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